WO2004086528A2 - Field-effect electrodes for organic, optoelectronic components - Google Patents

Field-effect electrodes for organic, optoelectronic components Download PDF

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Publication number
WO2004086528A2
WO2004086528A2 PCT/EP2004/001620 EP2004001620W WO2004086528A2 WO 2004086528 A2 WO2004086528 A2 WO 2004086528A2 EP 2004001620 W EP2004001620 W EP 2004001620W WO 2004086528 A2 WO2004086528 A2 WO 2004086528A2
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active region
component
field effect
optoelectronically active
component according
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PCT/EP2004/001620
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German (de)
French (fr)
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WO2004086528A3 (en
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Christoph Brabec
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Siemens Aktiengesellschaft
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Priority to EP04712540A priority Critical patent/EP1609193A2/en
Publication of WO2004086528A2 publication Critical patent/WO2004086528A2/en
Publication of WO2004086528A3 publication Critical patent/WO2004086528A3/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/60—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation in which radiation controls flow of current through the devices, e.g. photoresistors
    • H10K30/65—Light-sensitive field-effect devices, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • metals with small work functions are used for n-type contacts of optoelectronically active areas of components. This relationship is described, for example, in Brabec C.J., Sariciftci N. and Hummelen J.: "Plastic Solar Cells", Advanced Functional Materials, 2001, 11, no. 1, pages 15 to 26.
  • metals with a small work function are generally difficult to process and unstable in air.
  • Field effect electrodes are known from DE 26 32 895 AI and DE 198 22 501 AI.
  • the object of the invention is to provide an improved n-type contact for, in particular organic, optoelectronic components.
  • a component with an optoelectronically active region has means for generating a field effect in the optoelectronically active region in order to influence the removal and / or supply of charge carriers from and / or into the optoelectronically active region.
  • a field effect contact is used as the negative electrode for the component.
  • the component advantageously has a contact area, in particular a layered electrode, for contacting the optically active area.
  • a contact area in particular a layered electrode, for contacting the optically active area.
  • Contact areas for contacting the optical area can be used to remove charge carriers, that is to say electrons or holes, from the optically active area or to supply them to the optically active area.
  • An ohmic contact for the charge carriers can preferably be generated by the means for generating a field effect between the contact area for contacting the optoelectronically active area and the optoelectronically active area.
  • the optoelectronically active region can be formed by a semiconductor, in particular an organic semiconductor.
  • the contact area for contacting the optoelectronically active area preferably consists of metal, in particular aluminum, silver and / or gold.
  • the means for generating a field effect preferably have an electrode that functions as a field effect electrode, in particular a metal electrode.
  • the means for generating a field effect can also have an insulator, in particular an insulator layer.
  • the insulator layer is preferably arranged between the field effect electrode and the optically active region.
  • a grating can also be printed in the insulator which, together with the field electrode, forms a light trap.
  • the component is in particular a fotovoltaisch.es, light-detecting (photodetector) and / or light-emitting component.
  • the means for generating a field effect expediently also have means for applying a voltage between the field effect electrode and the optoelectronically active region in order to produce a field effect in the optoelectronically active region.
  • means for generating a field effect are arranged on the component in order to influence the removal and / or supply of charge carriers from and / or into the optoelectronically active region.
  • a field effect is generated in the optoelectronically active region by means of generating a field effect.
  • Figure 1 shows a component
  • a semitransparent or transparent electrode 2 for example made of indium tin oxide (ITO)
  • ITO indium tin oxide
  • an optoelectronically active region 3 in the form of a photoactive semiconductor layer which consists, for example, of conjugated polymers, organic molecules or mixtures thereof, in particular of a "conjugated polymer filler”. Mixture.
  • a field effect electrode in or on the n-type contact (negative electrode) is now proposed.
  • any metal for example gold, is deposited in a structured manner as contact region 4 for contacting the optoelectronically active region onto the optoelectronically active region 3.
  • the contact area 4 for contacting the optoelectronically active area functions equivalent to the source or drain contacts of a field effect transistor. It can, for example, be printed out of the solution, in particular using silver conductive pastes, or it can also be deposited (evaporated) from the gas phase.
  • An insulator 5 is arranged on the contact area 4 for contacting the optoelectronically active area.
  • the insulator 5 can for example be printed in the form of polyhydroxystyrene or in the form of SiO 2 or
  • AI2O3 evaporated, i.e. thermally separated.
  • the insulator 5 is then the actual one
  • Field effect electrode 6 deposited another metal electrode, which is equivalent to the gate contact of a field effect transistor.
  • the field effect electrode 6 is made of gold, for example.
  • these contacts allow a very simple structuring of the component, which has a positive effect on the light coupling out, for example if the component is an organic light-emitting diode (OLED), or for light coupling in, for example if the component is an organic photovoltaic Component (OPV) or an organic photo detector.
  • OLED organic light-emitting diode
  • OCV organic photovoltaic Component
  • a grating can be printed in the insulator 5, which forms a light trap together with the gate electrode, ie the field effect electrode 6.
  • the entire contact consisting of the negative electrode, in the form of the contact region 4 for contacting the optoelectronically active region, the insulator 5 and the field effect electrode 6 can advantageously be printed. This enables the production of a completely printed component in the form of a solar cell, light-emitting diode or photodiode.

Abstract

The invention relates to a field-effect contact that is used as a negative electrode for a component, in particular an organic component.

Description

Feldeffektelektroden für organische optoelektronische BauelementeField effect electrodes for organic optoelectronic components
Für n-Typ Kontakte optoelektronisch aktiver Bereiche von Bauelementen werden unter anderem Metalle mit kleinen Austrittsarbeiten verwendet. Dieser Zusammenhang ist beispielsweise in Brabec C. J., Sariciftci N. und Hummelen J. : "Plastic Solar Cells", Advanced Functional Materials, 2001, 11, No. 1, Seiten 15 bis 26, beschrieben. Metalle mit kleiner Austrittsarbeit sind aber in der Regel kompliziert zu verarbeiten und instabil in Luft.Among other things, metals with small work functions are used for n-type contacts of optoelectronically active areas of components. This relationship is described, for example, in Brabec C.J., Sariciftci N. and Hummelen J.: "Plastic Solar Cells", Advanced Functional Materials, 2001, 11, no. 1, pages 15 to 26. However, metals with a small work function are generally difficult to process and unstable in air.
Feldeffektelektroden sind aus DE 26 32 895 AI und DE 198 22 501 AI bekannt.Field effect electrodes are known from DE 26 32 895 AI and DE 198 22 501 AI.
Davon ausgehend liegt der Erfindung die Aufgabe zugrunde, einen verbesserten n-Typ Kontakt für, insbesondere organische, optoelektronische Bauelemente anzugeben.Based on this, the object of the invention is to provide an improved n-type contact for, in particular organic, optoelectronic components.
Diese Aufgabe wird durch die in den unabhängigen Ansprüchen angegebenen Erfindungen gelöst . Vorteilhaf e Ausgestaltungen ergeben sich aus den abhängigen Ansprüchen.This object is achieved by the inventions specified in the independent claims. Advantageous refinements result from the dependent claims.
Dementsprechend weist ein Bauelement mit einem optoelektronisch aktiven Bereich Mittel zum Erzeugen eines Feldeffektes im optoelektronisch aktiven Bereich auf, um die Entnahme und/oder Zufuhr von Ladungsträgern aus dem und/oder in den optoelektronisch aktiven Bereich zu beeinflussen.Accordingly, a component with an optoelectronically active region has means for generating a field effect in the optoelectronically active region in order to influence the removal and / or supply of charge carriers from and / or into the optoelectronically active region.
Für das Bauelement wird also beispielsweise ein Feldeffektkontakt als negative Elektrode verwendet.For example, a field effect contact is used as the negative electrode for the component.
Vorteilhafterweise weist das Bauelement einen Kontaktbereich, insbesondere eine schichtförmig aufgebaute Elektrode, zum Kontaktieren des optisch aktiven Bereichs auf. Über diesen Kontaktbereich zum Kontaktieren des optischen Bereichs können Ladungsträger, also Elektronen oder Löcher, aus dem optisch aktiven Bereich entnommen oder dem optisch aktiven Bereich zugeführt werden .The component advantageously has a contact area, in particular a layered electrode, for contacting the optically active area. About this Contact areas for contacting the optical area can be used to remove charge carriers, that is to say electrons or holes, from the optically active area or to supply them to the optically active area.
Vorzugsweise ist durch die Mittel zum Erzeugen eines Feldeffektes zwischen dem Kontaktbereich zum Kontaktieren des optoelektronisch aktiven Bereichs und dem optoelektronisch aktiven Bereich ein ohmscher Kontakt für die Ladungsträger erzeugbar.An ohmic contact for the charge carriers can preferably be generated by the means for generating a field effect between the contact area for contacting the optoelectronically active area and the optoelectronically active area.
Der optoelektronisch aktive Bereich kann durch einen Halbleiter gebildet werden, insbesondere einen organischen Halbleiter.The optoelectronically active region can be formed by a semiconductor, in particular an organic semiconductor.
Der Kontaktbereich zum Kontaktieren des optoelektronisch aktiven Bereichs besteht vorzugsweise aus Metall, insbesondere Aluminium, Silber und/oder Gold.The contact area for contacting the optoelectronically active area preferably consists of metal, in particular aluminum, silver and / or gold.
Die Mittel zum Erzeugen eines Feldeffektes weisen vorzugsweise eine Elektrode auf, die als Felde fektelektrode fungiert, insbesondere eine Metallelektrode.The means for generating a field effect preferably have an electrode that functions as a field effect electrode, in particular a metal electrode.
Darüber hinaus können die Mittel zum Erzeugen eines Feldeffektes auch einen Isolator aufweisen, insbesondere eine Isolatorschicht. Die Isolatorschicht ist vorzugsweise zwischen der Feldeffektelektrode und dem optisch aktiven Bereich angeordnet.In addition, the means for generating a field effect can also have an insulator, in particular an insulator layer. The insulator layer is preferably arranged between the field effect electrode and the optically active region.
In den Isolator kann auch noch ein Gräting gedruckt sein, das zusammen mit der Felde fektelektrode eine Lichtfalle bildet.A grating can also be printed in the insulator which, together with the field electrode, forms a light trap.
Das Bauelement ist insbesondere ein fotovoltaisch.es , Licht detektierendes (Fotodetektor-) und/oder Licht emittierendes Bauelement. Darüber hinaus weisen die Mittel zum Erzeugen eines Feldeffektes zweckmäßiger Weise auch Mittel zum Anlegen einer Spannung zwischen der Feldeffektelektrode und dem optoelektronisch aktiven Bereich auf, um einen Feldeffekt im optoelektronisch aktiven Bereich zu erzeugen.The component is in particular a fotovoltaisch.es, light-detecting (photodetector) and / or light-emitting component. In addition, the means for generating a field effect expediently also have means for applying a voltage between the field effect electrode and the optoelectronically active region in order to produce a field effect in the optoelectronically active region.
Bei einem Verfahren zum Herstellen eines Bauelementes mit einem optoelektronisch aktiven Bereich werden an dem Bauelement Mittel zum Erzeugen eines Feldeffektes angeordnet, um die Entnahme und/oder Zufuhr von Ladungsträgern aus dem und/oder in den optoelektronisch aktiven Bereich zu beeinflussen.In a method for producing a component with an optoelectronically active region, means for generating a field effect are arranged on the component in order to influence the removal and / or supply of charge carriers from and / or into the optoelectronically active region.
In einem Verfahren zum Betrieb eines Bauelementes mit einem optoelektronisch aktiven Bereich wird im optoelektronisch aktiven Bereich durch Mittel zum Erzeugen eines Feldeffektes ein Feldeffekt erzeugt.In a method for operating a component with an optoelectronically active region, a field effect is generated in the optoelectronically active region by means of generating a field effect.
Vorteilhafte Ausgestaltungen der Verfahren ergeben sich analog zu den genannten vorteilhaften Ausgestaltungen der Vorrichtung .Advantageous refinements of the method result analogously to the above-mentioned advantageous refinements of the device.
Weitere Vorteile und Merkmale der Erfindung ergeben sich aus der Beschreibung eines Ausführungsbeispiels anhand der Zeichnung. Dabei zeigt:Further advantages and features of the invention result from the description of an exemplary embodiment with reference to the drawing. It shows:
Figur 1 ein Bauelement .Figure 1 shows a component.
In Figur 1 erkennt man ein optoelektronisches Bauelement mit einem Substrat 1, das beispielsweise aus Glas ist. Eine semitransparente oder transparente Elektrode 2 , beispielsweise aus Indiumzinnoxid (ITO) , schließt sich ein optoelektronisch aktiver Bereich 3 in Form einer fotoaktiven Halbleiterschicht an, die beispielsweise aus konjugierten Polymeren, organischen Molekülen oder Mischungen daraus besteht, insbesondere aus einer" konjugierten Polymer- Fülleren-Mischung. Es wird nun die Verwendung einer Feldeffektelektrode im bzw. am n-Typ Kontakt (negative Elektrode) vorgeschlagen. Dafür wird ein beliebiges Metall, beispielsweise Gold, als Kontaktbereich 4 zum Kontaktieren des optoelektronisch aktiven Bereichs strukturiert auf den optoelektronisch aktiven Bereich 3 abgeschieden. Der Kontaktbereich 4 zum Kontaktieren des optoelektronisch aktiven Bereichs fungiert äquivalent zu den Source- bzw. Drain-Kontakten eines Feldeffekttransistors. Er kann beispielsweise aus der Lösung, insbesondere unter Einsatz von Silberleitpasten, gedruckt werden oder auch aus der Gasphase abgeschieden (verdampft) .1 shows an optoelectronic component with a substrate 1, which is made of glass, for example. A semitransparent or transparent electrode 2, for example made of indium tin oxide (ITO), is followed by an optoelectronically active region 3 in the form of a photoactive semiconductor layer which consists, for example, of conjugated polymers, organic molecules or mixtures thereof, in particular of a "conjugated polymer filler". Mixture. The use of a field effect electrode in or on the n-type contact (negative electrode) is now proposed. For this purpose, any metal, for example gold, is deposited in a structured manner as contact region 4 for contacting the optoelectronically active region onto the optoelectronically active region 3. The contact area 4 for contacting the optoelectronically active area functions equivalent to the source or drain contacts of a field effect transistor. It can, for example, be printed out of the solution, in particular using silver conductive pastes, or it can also be deposited (evaporated) from the gas phase.
Auf dem Kontaktbereich 4 zum Kontaktieren des optoelektronisch aktiven Bereiches wird ein Isolator 5 angeordnet. Der Isolator 5 kann beispielsweise in Form von Polyhydroxystyrol gedruckt oder etwa in Form von Siθ2 oderAn insulator 5 is arranged on the contact area 4 for contacting the optoelectronically active area. The insulator 5 can for example be printed in the form of polyhydroxystyrene or in the form of SiO 2 or
AI2O3 aufgedampft, also thermisch abgeschieden werden.AI2O3 evaporated, i.e. thermally separated.
Auf den Isolator 5 wird dann als eigentlicheThe insulator 5 is then the actual one
Feldeffektelektrode 6 eine weitere Metallelektrode abgeschieden, die äquivalent zum Gate-Kontakt eines Feldeffekttransistors ist. Die Feldeffektelektrode 6 ist beispielsweise aus Gold.Field effect electrode 6 deposited another metal electrode, which is equivalent to the gate contact of a field effect transistor. The field effect electrode 6 is made of gold, for example.
Durch das Anlagen einer Gate-Spannung an der Feldeffektelektrode 6 kann man die Kontakteigenschaften des Source-Drain- nterfaces, also des Kontaktbereiches 4 zum Kontaktieren des optoelektronisch aktiven Bereichs, zum Halbleiter, also zum optoelektronisch aktiven Bereich 3, beeinflussen. Durch die Wahl des Vorzeichens der Gate- Spannung kann man eine Verbesserung der Kontakteigenschaften sowohl für Elektronen als auch für Löcher herbeiführen. Dadurch kann dieser Kontakt die bisher verwendeten Metalle mit kleinen Austrittsarbeiten ersetzen. Weitere wesentliche Vorteile sind, dass diese Kontakte eine sehr einfache Strukturierung des Bauelementes zulassen, die sich positiv für die Lichtauskopplung erweist, etwa wenn das Bauelement eine organische Licht emittierende Diode (OLED) ist, oder für die Lichteinkopplung, etwa wenn das Bauelement ein organisches fotovoltaisches Bauelement (OPV) oder ein organischer Fotodetektor ist. So kann man zum Beispiel in den Isolator 5 ein Gräting drucken, das zusammen mit der Gate- Elektrode, also der Feldeffektelektrode 6, eine Lichtfalle bildet.By applying a gate voltage to the field effect electrode 6, one can influence the contact properties of the source-drain interface, that is to say the contact area 4 for contacting the optoelectronically active area, to the semiconductor, ie to the optoelectronically active area 3. The choice of the sign of the gate voltage can bring about an improvement in the contact properties for both electrons and holes. As a result, this contact can replace the metals previously used with small work functions. Further significant advantages are that these contacts allow a very simple structuring of the component, which has a positive effect on the light coupling out, for example if the component is an organic light-emitting diode (OLED), or for light coupling in, for example if the component is an organic photovoltaic Component (OPV) or an organic photo detector. For example, a grating can be printed in the insulator 5, which forms a light trap together with the gate electrode, ie the field effect electrode 6.
Vorteilhafterweise lässt sich der gesamte Kontakt bestehend aus der negativen Elektrode, in Form des Kontaktbereichs 4 zum Kontaktieren des optoelektronisch aktiven Bereichs, dem Isolator 5 und der Feldeffektelektrode 6 drucken. Dadurch wird die Herstellung eines vollständig gedruckten Bauelements in Form einer Solarzelle, Leuchtdiode oder Fotodiode ermöglicht . The entire contact consisting of the negative electrode, in the form of the contact region 4 for contacting the optoelectronically active region, the insulator 5 and the field effect electrode 6 can advantageously be printed. This enables the production of a completely printed component in the form of a solar cell, light-emitting diode or photodiode.

Claims

Patentansprüche claims
1. Bauelement mit einem optoelektronisch aktiven Bereich (3), dadurch gekennzeichne , dass das Bauelement Mittel (5, 6) zum Erzeugen eines1. Component with an optoelectronically active region (3), characterized in that the component has means (5, 6) for generating a
Feldeffekts aufweist, um die Entnahme und/oder Zufuhr von Ladungsträgern aus dem und/oder in den optoelektronisch aktiven Bereich (3) zu beeinflussen.Has field effect to influence the removal and / or supply of charge carriers from and / or into the optoelectronically active region (3).
2. Bauelement nach Anspruch 1, dadurch gekennzeichnet, dass das Bauelement einen Kontaktbereich (4) zum Kontaktieren des optoelektronisch aktiven Bereichs (3) aufweist.2. The component according to claim 1, characterized in that the component has a contact region (4) for contacting the optoelectronically active region (3).
3. Bauelement nach Anspruch 2, dadurch gekennzeichnet, dass durch die Mittel (5, 6) zum Erzeugen eines Feldeffekts zwischen dem Kontaktbereich (4) zum Kontaktieren des optoelektronisch aktiven Bereichs und dem optoelektronisch aktiven Bereichs (3) ein selektiver Kontakt für die Ladungsträger erzeugbar ist.3. The component according to claim 2, characterized in that the means (5, 6) for generating a field effect between the contact region (4) for contacting the optoelectronically active region and the optoelectronically active region (3) produce a selective contact for the charge carriers is.
4. Bauelement nach einem der Ansprüche 2 oder 3 , dadurch gekennzeichnet, dass der Kontaktbereich (4) zum Kontaktieren des optoelektronisch aktiven Bereichs Metall enthält, insbesondere Aluminium, Silber und/oder Gold.4. Component according to one of claims 2 or 3, characterized in that the contact region (4) for contacting the optoelectronically active region contains metal, in particular aluminum, silver and / or gold.
5. Bauelement nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass der optoelektronisch aktive Bereich (3) einen Halbleiter enthält, insbesondere einen organischen Halbleiter.5. Component according to one of the preceding claims, characterized in that the optoelectronically active region (3) contains a semiconductor, in particular an organic semiconductor.
6. Bauelement nach einem der vorhergehenden Ansprüche, dadurch gekennzeichne , dass die Mittel (5, 6) zum Erzeugen eines Feldeffekts eine Feldeffektelektrode (6) aufweisen. 6. Component according to one of the preceding claims, characterized in that the means (5, 6) for generating a field effect have a field effect electrode (6).
7. Bauelement nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Mittel (5, 6) zum Erzeugen eines Feldeffektes einen Isolator (5) aufweisen.7. Component according to one of the preceding claims, characterized in that the means (5, 6) for generating a field effect have an insulator (5).
8. Bauelement nach den Ansprüche 6 und 7, dadurch gekennzeichnet, dass der Isolator (5) zwischen der Feldeffektelektrode (6) und dem optoelektronisch aktiven Bereich (3) angeordnet ist.8. The component according to claims 6 and 7, characterized in that the insulator (5) between the field effect electrode (6) and the optoelectronically active region (3) is arranged.
9. Bauelement nach einem der Ansprüche 7 oder 8 , dadurch gekennzeichnet, dass in den Isolator (5) ein Gräting gedruckt ist.9. Component according to one of claims 7 or 8, characterized in that a grating is printed in the insulator (5).
10. Bauelement nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass das Bauelement ein fotovoltaisches und/oder Licht emittierendes Bauelement ist.10. The component according to one of the preceding claims, characterized in that the component is a photovoltaic and / or light-emitting component.
11. Verfahren zum Herstellen eines Bauelements mit einem optoelektronisch aktiven Bereich (3), bei dem an dem Bauelement Mittel (5, 6) zum Erzeugen eines Feldeffektes angeordnet werden, um die Entnahme und/oder Zufuhr von Ladungsträgern aus dem und/oder in den optoelektronisch aktiven Bereich (3) beeinflussbar zu machen.11. A method for producing a component with an optoelectronically active region (3), in which means (5, 6) for generating a field effect are arranged on the component in order to remove and / or supply charge carriers from and / or into the to make it possible to influence the optoelectronically active region (3).
12. Verfahren zum Betrieb eines Bauelementes mit einem optoelektronisch aktiven Bereich (3), bei dem im optoelektronisch aktiven Bereich (3) ein Feldeffekt erzeugt wird. 12. Method for operating a component with an optoelectronically active region (3), in which a field effect is generated in the optoelectronically active region (3).
PCT/EP2004/001620 2003-03-28 2004-02-19 Field-effect electrodes for organic, optoelectronic components WO2004086528A2 (en)

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EP04712540A EP1609193A2 (en) 2003-03-28 2004-02-19 Field-effect electrodes for organic, optoelectronic components

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DE10314161.8 2003-03-28
DE10314161A DE10314161A1 (en) 2003-03-28 2003-03-28 Field effect electrodes for organic optoelectronic components

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WO2000048257A1 (en) * 1999-02-12 2000-08-17 Cambridge Display Technology Ltd Opto-electrical devices
WO2001018886A2 (en) * 1999-09-09 2001-03-15 Siemens Aktiengesellschaft Organic light-emitting diode and corresponding production method
WO2003022575A1 (en) * 2001-09-11 2003-03-20 Dupont Teijin Films U.S. Limited Partnership Heat-stabilised poly(ethylene naphthalate) film for flexible electronic and opto-electronic devices
US20030059984A1 (en) * 1999-12-21 2003-03-27 Plastic Logic Limited Solution processing

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DE19808936A1 (en) * 1998-03-03 1999-09-16 Aventis Res & Tech Gmbh & Co Photodetector and its use
JP2002343578A (en) * 2001-05-10 2002-11-29 Nec Corp Light-emitting body, light-emitting element and light- emitting display device

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Publication number Priority date Publication date Assignee Title
WO2000048257A1 (en) * 1999-02-12 2000-08-17 Cambridge Display Technology Ltd Opto-electrical devices
WO2001018886A2 (en) * 1999-09-09 2001-03-15 Siemens Aktiengesellschaft Organic light-emitting diode and corresponding production method
US20030059984A1 (en) * 1999-12-21 2003-03-27 Plastic Logic Limited Solution processing
WO2003022575A1 (en) * 2001-09-11 2003-03-20 Dupont Teijin Films U.S. Limited Partnership Heat-stabilised poly(ethylene naphthalate) film for flexible electronic and opto-electronic devices

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EP1609193A2 (en) 2005-12-28
DE10314161A1 (en) 2004-10-28
WO2004086528A3 (en) 2005-12-08

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